个人简介：

杨炳雄教授本科毕业于清华大学物理系，博士毕业于日本北海道大学电气工程系，纽约市立大学博士后研究员，辽宁省和大连市科技领军人才。曾任富士通量子器件公司北美研发经理和美国MTX公司硅谷研发中心主任，并创立大连艾科科技开发有限公司。

杨炳雄教授多年从事化合物半导体的结晶生长、器件制作、高速光电器件封装等领域的研究，在国际一流学术刊物发表研究论文30多篇。曾带领团队成功开发多项国际领先的高速光电子技术产品，并在光通讯领域得到广泛应用。其创立的大连艾科科技开发有限公司，专注于开发高速高可靠性光电子产品，取得了多项技术突破，产品性能指标达到国际先进水平。曾带领技术团队研发世界最先进的激光气体检测技术，成功开发激光气体传感器系列产品，产品各项性能指标均处于世界领先水平，并顺利打入国际市场。

学术成果：

[1] Bing Xiong Yang, Hirotatsu Ishii, Kouichi Iizuka, Hideki Hasegawa and Hideo Ohno, "MBE Growth of InP Using Polycrystalline InP as Phosphorus Source", Proceedings of 2nd International Conference on Indium Phosphide and Related Materials, pp.127–130 (1990)

[2] Bing Xiong Yang and Hideki Hasegawa, "Migration–Enhanced Epitaxy of InP Using Polycrystalline InP as Phosphorus Source", Jpn. J. Appl. Phys. Vol.30 pp.3782–3787 (1991)

[3] Bing Xiong Yang and Hideki Hasegawa, "Migration–Enhanced Epitaxy of InP Using Polycrystalline InP as Phosphorus Source", Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, pp.405–407 (1991)

[4] Bing Xiong Yang and Hideki Hasegawa, "Molecular Beam Epitaxy and Migration–Enhanced Epitaxial Growth of InP Using Polycrystalline InP as Phosphorus Source", Jpn. J. Appl. Phys. Vol.32, pp.704–710, (1993)

[5] Bing Xiong Yang and Hideki Hasegawa, "Properties of InP Grown by Migration Enhanced Epitaxy Using Polycrystalline InP as Phosphorus Source", Proceedings of 5th International Conference on Indium Phosphide and Related Materials, pp.271–274 (1993)

[6] Bing Xiong Yang and Hideki Hasegawa, "Behavior of Growth Rate in Gas Source Molecular Beam Epitaxial Growth of InP Using Phosphine", Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, pp.754–756, (1993)

[7] Bing Xiong Yang and Hideki Hasegawa, "Effects of Phosphorus Pressure on Growth Rate and Layer Quality of InP Grown by Gas Source Molecular Beam Epitaxy", Jpn. J. Appl. Phys., Vol. 33, pp.742–748, (1994)

[8] Bing Xiong Yang, Tsuyoshi Ozeki and Hideki Hasegawa, "Behavior of InP Growth by Gas Source Molecular Beam Epitaxy on Singular and Vicinal Substrates", Proceedings of 6th International Conference on Indium Phosphide and Related Materials, pp.648–651 (1994)

[9] Tsuyoshi Ozeki, Bing Xiong Yang and Hideki Hasegawa, "A New Method for Calibration of V/III Ratio in Gas Source MBE and Its Application to Migration–Enhanced Epitaxy", J. Crystal Growth. Vol. 150, pp.602-606 (1995)

[10] Bing Xiong Yang, Li He and Hideki Hasegawa, "Study of As4Beam– induced P–As Exchange Reaction on InP Surface by Photoluminescence  and X–ray Diffraction”, Proceedings of  the 7th International Conference on Indium Phosphide and Related Materials, 1995, Sapporo, Japan

[11] B.X. Yang, T. Ozeki, Y. Ishikawa and H. Hasegawa  "Scanning  Tunneling Microscopy Study of InP Surface reconstruction Grown by  MOMBE",  Jpn. J. Appl. Phys., Vol.35, No. 2, (1996)

[12] Bing Xiong Yang, Li He and Hideki Hasegawa, “Properties of InAsxP1-x Layer formed by P-As Exchange Reaction on (001) InP Surface Exposed to As4 Beam”, J. Electronic Materials, Vol.25, pp.379-384 (1996)

[13] M. Tamargo, Y.Guo, L. Zeng, A. Cavus, B. Yang, G. Aizin, Y.C. Chen, and N. Dai, “Lasing in ZnCdMgSe Structures Lattice-Matched to InP Substrates”, 1996 Electronic Materials Conference, Santa Barbara, CA. June 1996.

[14] F.H. Pollak, R. Ram, T. Holden, J.L. Freeouf, B.X. Yang and M.C. Tamargo, “Spectral Ellipsometry Investigation of ZnCdSe Lattice-Matched to InP”, 1996 Electronic Materials Conference, Santa Barbara, CA. June 1996.

[15] A. Cavus,  B.X. Yang, L. Zeng, M. Wright, B. Shewareged, M.C. Tamargo, E. Snoeks and L. Zhao, “Highly Improved Quality of Lattice-Matched ZnCdSe on InP Substrates: Use of III-V Buffer Layers and Doping”,  the 8th International Conference on Molecular Beam Epitaxy, Malibu, CA, August 1996.

[16] L. Zeng, A. Cavus,  B.X. Yang, N. Dai, F. Naz, M.C. Tamargo, Y. Guo, G. Ayzin, Y.C. Chen, N. Bambha, A. Gray and F. Semendy, “MBE Growth of High Quality Lattice-Matched ZnCdMgSe Quaternaries on InP Substrates”, the 8th International Conference on Molecular Beam Epitaxy, Malibu, CA, August 1996.

研究经历：

1. 2005年4月–现在  大连艾科科技开发有限公司总裁、技术首席

2. 2001年1月–2005年3月  Multiplex 硅谷研发中心 主任（Director)  光电器件和子系统技术

3.1997年9月–2000年12月  富士通量子器件（北美）项目经理  光电器件和子系统技术

4. 1995年9月–1997年8月  纽约市立大学 研究员（博士后）  II-IV族宽禁带半导体的MBE生长

5. 1993年4月–1995年8月  日立特聘研究员 InGaAsP/InP及关联材料量子结构的MOMBE/CBE 生长法

6. 1987年10月–1993年3月  北海道大学 博士课程研究生  InP关联材料的MBE生长法

学术活动：

1. 美国IEEE通信分会会员

2. 美国真空学会会员

3. 日本应用物理学会会员